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This is an image of a micro-holes array with a scanning range of 30 μm after the Chemical Mechanical Polishing (CMP) process. The CMP process is a key technique for wafer flattening. It can provide a strong guarantee for the improvement of the CMP process in terms of surface roughness and surface shape measurement.
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CMP Micro-Holes Array
SiC Surface
The Surface Potential of SRAM
Standard Wafer
Microelectrode
182 nm Standard Step Height
Girds Matrix
Polished Silicon Wafer