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This is an image of SiC atomic step with a scanning range of 500 nm, and the step height is approximately 0.75 nm. SiC, as a representative material of wide bandgap semiconductors, is regarded as an ideal material for manufacturing high-power semiconductor devices.
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This is a surface topography image of a glass substrate with a scanning range of 10 μm, and its roughness is 9.9 nm.
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