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LTPS Grain -
The Surface Potential of Au-Al Material - SiC Atomic Step
This is an image of SiC atomic step with a scanning range of 500 nm, and the step height is approximately 0.75 nm. SiC, as a representative material of wide bandgap semiconductors, is regarded as an ideal material for manufacturing high-power semiconductor devices.
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SiC Atomic Step -
Patterned Sapphire Substrate (PSS) -
CMP Micro-Holes Array -
OLED Pattern -
ETL Structure -
SiC Surface -
The Edge Structure of PSS -
The Surface Potential of SRAM -
Standard Wafer
