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LTPS Grain -
SiC Atomic Step
This is an image of SiC atomic step with a scanning range of 500 nm, and the step height is approximately 0.75 nm. SiC, as a representative material of wide bandgap semiconductors, is regarded as an ideal material for manufacturing high-power semiconductor devices.
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SiC Atomic Step -
The height of PSS is about 2 μm and the bottom width is about 3 μm. Sapphire wafers are the most widely used substrate material in the semiconductor lighting industry, and using PSS is a common method to improve the luminous efficiency of semiconductor lighting devices.">
Patterned Sapphire Substrate (PSS)
CMP Micro-Holes Arrayoads/upload/20251030/251030142413S2.jpg" class="box">
ETL Structure
PLZT
SiC Surface
The Edge Structure of PSS
The Surface Potential of SRAM
The height of PSS is about 2 μm and the bottom width is about 3 μm. Sapphire wafers are the most widely used substrate material in the semiconductor lighting industry, and using PSS is a common method to improve the luminous efficiency of semiconductor lighting devices.">