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The Surface Potential of 2D Materials -
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SiC Atomic Step
This is an image of SiC atomic step with a scanning range of 500 nm, and the step height is approximately 0.75 nm. SiC, as a representative material of wide bandgap semiconductors, is regarded as an ideal material for manufacturing high-power semiconductor devices.
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SiC Atomic Step
Patterned Sapphire Substrate (PSS)
CMP Micro-Holes Array
OLED Pattern
ETL Structure
PLZT
SiC Surface
The Edge Structure of PSS
The Surface Potential of SRAMRoom 2109, 21st Floor, Building 2, Ruihong Enterprise World, 118 Feihong Road, Hongkou District, Shanghai
SiC Atomic Step
